Digital Electronics/Circuits Multiple Choice Questions on “Erasable Programmable Read Only Memory”.
1. EPROM uses an array of _______________
A. p-channel enhancement type MOSFET
B. n-channel enhancement type MOSFET
C. p-channel depletion type MOSFET
D. n-channel depletion type MOSFET
Answer: B
Clarification: EPROMs are Erasable Programmable ROMs which can be erased using UV radiation and re-programmed. EPROM uses an array of n-channel enhancement type MOSFET with an insulated gate structure.
2. The EPROM was invented by ______________
A. Wen Tsing Chow
B. Dov Frohman
C. Luis O Brian
D. J P Longwell
Answer: B
Clarification: The EPROM was invented by Dov Frohman of Intel in 1971. EPROMs are Erasable Programmable ROMs which can be erased using UV radiation and re-programmed.
3. Address decoding for dynamic memory chip control may also be used for ______________
A. Chip selection and address location
B. Read and write control
C. Controlling refresh circuits
D. Memory mapping
Answer: A
Clarification: Address decoding for dynamic memory chip control may also be used for chip selection and address location. Chip Selection enables or disables the functioning of the chip.
4. Which of the following describes the action of storing a bit of data in a mask ROM?
A. A 0 is stored by connecting the gate of a MOS cell to the address line
B. A 0 is stored in a bipolar cell by shorting the base connection to the address line
C. A 1 is stored by connecting the gate of a MOS cell to the address line
D. A 1 is stored in a bipolar cell by opening the base connection to the address line
Answer: C
Clarification: The action of storing a bit of data in a mask ROM is that when a 1 is stored by connecting the gate of a MOS cell to the address line. Mask ROMs are programmed by the manufacturer and are custom made as per the user.
5. The check sum method of testing a ROM ______________
A. Allows data errors to be pinpointed to a specific memory location
B. Provides a means for locating and correcting data errors in specific memory locations
C. Indicates if the data in more than one memory location is incorrect
D. Simply indicates that the contents of the ROM are incorrect
Answer: D
Clarification: If checking of a sum method goes wrong, it simply indicates that the contents of the ROM are incorrect.
6. The initial values in all the cells of an EPROM is ______________
A. 0
B. 1
C. Both 0 and 1
D. Alternate 0s and 1s
Answer: B
Clarification: The initial values in all the cells of an EPROM is 1.
7. To store 0 in such a cell, the floating point must be ______________
A. Reprogrammed
B. Restarted
C. Charged
D. Power off
Answer: C
Clarification: EPROMs are Erasable Programmable ROMs which can be erased using UV radiation and re-programmed. To store 0 in the cell of an EPROM, the floating point must be charged.
8. The major disadvantage of RAM is?
A. Its access speed is too slow
B. Its matrix size is too big
C. It is volatile
D. High power consumption
Answer: C
Clarification: RAM is volatile memory. Thus, RAM stores the data as long as it is powered on and once the power goes out, it loses its data.
9. Which one of the following is used for the fabrication of MOS EPROM?
A. TMS 2513
B. TMS 2515
C. TMS 2516
D. TMS 2518
Answer: C
Clarification: EPROMs are Erasable Programmable ROMs which can be erased using UV radiation and re-programmed. TMS 2516 is a MOS EPROM device.
10. How many addresses a MOS EPROM have?
A. 1024
B. 512
C. 2516
D. 256
Answer: C
Clarification: EPROMs are Erasable Programmable ROMs which can be erased using UV radiation and re-programmed. MOS EPROM (i.e. TMS 2516) has 2048 (211 = 2048) addresses.
11. To read from the memory, the select input and the power down/program input must be ______________
A. HIGH
B. LOW
C. Sometimes HIGH and sometimes LOW
D. Alternate HIGH and LOW
Answer: B
Clarification: To read from the memory, the select input and the power down/program input must be LOW.
12. ROMs retain data when ______________
A. Power is on
B. Power is off
C. System is down
D. All of the Mentioned
Answer: D
Clarification: ROM retains the data when power is off/on/down because it has to read the data from memory only and it is done in every condition. It is non-volatile memory.
13. Suppose that a certain semiconductor memory chip has a capacity of 8K × 8. How many bytes could be stored in this device?
A. 8,000
B. 65,536
C. 8,192
D. 64,000
Answer: C
Clarification: 8K = 8 * 1024 = 8192.
14. When a RAM module passes the checker board test it is ______________
A. Able to read and write only 0s
B. Faulty
C. Probably good
D. Able to read and write only 1s
Answer: C
Clarification: When a RAM module passes the checker board test it is probably good. It is a volatile memory. Thus, RAM stores the data as long as it is powered on and once the power goes out, it loses its data.
15. What is the difference between static RAM and dynamic RAM?
A. Static RAM must be refreshed, dynamic RAM does not
B. There is no difference
C. Dynamic RAM must be refreshed, static RAM does not
D. SRAM is slower than DRAM
Answer: C
Clarification: Dynamic RAM must be refreshed because it made up of capacitor, and capacitor required refresh. Static RAM made up of flip flop and it doesn’t required a refresh.