250+ TOP MCQs on Metal Oxide Semiconductor (MOS) Transistor – 1 and Answers

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VLSI Multiple Choice Questions on “Metal Oxide Semiconductor (MOS) Transistor – 1”.

1. The conductivity of the pure silicon is raised by:
A. Introducing Dopants (impurities)
B. Increasing Pressure
C. Decreasing Temperature
D. Deformation of Lattice
Answer: A
Clarification: By introducing Dopants free charge carriers increase further increasing the conductivity of silicon.

2. The n-type semiconductor have _______ as majority carriers.
A. Holes
B. Negative ions
C. Electrons
D. Positive ions
Answer: C
Clarification: In n-type semiconductor the majority charge carriers present are electrons.

3. The majority carriers of p-type semiconductor are:
A. Holes
B. Negative ions
C. Electrons
D. Positive ions
Answer: A
Clarification: The majority charge carriers of n-type semiconductors are holes.

4. The n-MOS transistor is made up of:
A. N-type source, n-type drain and p-type bulk
B. N-type source, p-type drain and p-type bulk
C. P-type source, n-type drain and n-type bulk
D. P- type source, p-type drain and n-type bulk
Answer: A
Clarification: n-MOS Transistor consists of n-type source, n-type drain and p-type bulk.

5. The correct representation of n-MOSFET is:
A. vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5a”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5a
B. vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5b”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5b
C. vlsi-questions-answers-cmos-logic-gates-q5c1″>vlsi-questions-answers-cmos-logic-gates-q5c
D. None of the mentioned
Answer: C
Clarification: This is the correct representation of n-MOSFET : vlsi-questions-answers-cmos-logic-gates-q5c1″>vlsi-questions-answers-cmos-logic-gates-q5c

6. The correct representation of p-MOSFET is:
A. vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6a”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6a
B. vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6b”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6b
C. vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6c”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6c
D. vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6d”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6d
Answer: B
Clarification: This is the correct representation of p-MOSFET: vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6b”>vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q6b

7. The oxide layer formed in the MOSFET is:
A. Metal oxide
B. Silicon dioxide
C. Poly Silicon oxide
D. Oxides of Non metals
Answer: B
Clarification: Silicon Dioxide (Commonly called as glass) is the insulating oxide layer formed in MOSFET.

8. The drain current is varied by:
A. Gate to source voltage
B. Gate current
C. Source Voltage
D. None of the mentioned
Answer: A
Clarification: The Gate to Source voltage acts as input which varies the drain current.

9. The low voltage on the gate of p-MOSFET forms:
A. Channel of negative carriers
B. Channel is not formed
C. Channel is clipped
D. Channel of positive carriers
Answer: D
Clarification: For a p-MOS low gate voltage forms a conducting channel of positive carriers.

10. The n-MOSFET is working as accumulation mode when:
A. Gate is applied with positive voltage
B. Gate is grounded
C. Gate is applied with negative voltage
D. Gate is connected to source
Answer: C
Clarification: When the negative voltage is applied to the gate, there develops a presence of negative charge on the gate. The mobile positively charged holes are attracted to the region beneath the gate. This explains the formation of accumulation mode.